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IRFB4137PBF
  • IRFB4137PBF

IRFB4137PBF

IRFB4137PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFB4137PBF
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 3943
  • Description: IRFB4137PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 69MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 341W Tc
Element Configuration Single
Power Dissipation 341W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 69m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5168pF @ 50V
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 38A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 300V
Height 9.02mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFB4137PBF Description

StrongIRFETTM power MOSFETs are designed to provide low RDS(on) and high current capability. The IRFB4137PBF is an ideal choice for applications that require high performance and ruggedness at low frequencies.

With its comprehensive portfolio, we cover a wide range of applications, including DC motors, battery management systems, inverters, and DC-DC converters.


IRFB4137PBF Features

  • Enhanced body diode dV/dt and dI/dt Capability

  • Lead-Free, RoHS Compliant 

  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

  • Fully Characterized Capacitance and Avalanche SOA

  • Industry standard through-hole power package

  • High-current rating

  • Wide portfolio available

  • Product qualification according to JEDEC standard

  • Silicon optimized for applications switching below <100 kHz

  • Softer body-diode compared to previous silicon generation


IRFB4137PBF Applications

  • SMPS

  • UPS

  • Solar power inverter

  • DC motor drives

  • Battery powered applications

  • Uninterruptible Power Supply

  • High Speed Power Switching

  • High Efficiency Synchronous Rectification in SMPS

  • Hard Switched and High Frequency Circuits 


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