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IRFB4110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFB4110PBF
- Package: TO-220-3
- Datasheet:
- Stock: 9280
- Description: IRFB4110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Packaging | Tube |
| Published | 2008 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Length | 10.66mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Current Rating | 180A |
| Radiation Hardening | No |
| Number of Pins | 3 |
| Package / Case | TO-220-3 |
| REACH SVHC | No SVHC |
| Height | 16.51mm |
| Width | 4.826mm |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~175°C TJ |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| Subcategory | FET General Purpose Power |
| Number of Elements | 1 |
| JEDEC-95 Code | TO-220AB |
| Case Connection | DRAIN |
| Element Configuration | Single |
| Power Dissipation | 370W |
| Turn On Delay Time | 25 ns |
| Threshold Voltage | 4V |
| Power Dissipation-Max | 370W Tc |
| Recovery Time | 75 ns |
| Continuous Drain Current (ID) | 180A |
| Transistor Application | SWITCHING |
| Drain-source On Resistance-Max | 0.0045Ohm |
| Turn-Off Delay Time | 78 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.5m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 9620pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 210nC @ 10V |
| Rise Time | 67ns |
| Fall Time (Typ) | 88 ns |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Dual Supply Voltage | 100V |
| Nominal Vgs | 4 V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Pulsed Drain Current-Max (IDM) | 670A |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
Product Description: IRFB4110PBF
The IRFB4110PBF is a high-performance power MOSFET designed by Infineon Technologies. It is part of the HEXFET® series and is optimized for use in various power applications where low on-state resistance and high current-carrying capability are crucial.
Description:
The IRFB4110PBF is a N-channel power MOSFET with a TO-220AB package, offering excellent thermal performance and ease of mounting. It is constructed using advanced HEXFET technology, which provides low on-resistance and fast switching characteristics.
Features:
High Current Handling: The IRFB4110PBF MOSFET can handle high continuous drain currents, making it suitable for power applications that require significant power delivery.
Low On-Resistance: It features a low on-state resistance (RDS(on)), resulting in reduced conduction losses and improved efficiency in high-power applications.
Fast Switching: The MOSFET has fast switching characteristics, which helps in minimizing switching losses and improving overall system performance.
Avalanche Rated: The IRFB4110PBF is avalanche-rated, meaning it can handle energy dissipation during avalanche breakdown without damage.
Low Gate Charge: It has a relatively low gate charge, which allows for efficient and rapid switching between the on and off states.
RoHS Compliant: The IRFB4110PBF is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it meets the environmental and safety standards.
Applications:
The IRFB4110PBF MOSFET is well-suited for a wide range of power applications where high current, low on-state resistance, and efficient switching are critical. Some common applications include:
Switching Power Supplies: The IRFB4110PBF is used in switch-mode power supplies (SMPS) to regulate output voltages efficiently.
Motor Control: It is employed in motor drive circuits for controlling the speed and direction of motors in various industrial and automotive applications.
Inverters: The MOSFET is used in DC-AC inverters to convert DC power to AC power, commonly found in renewable energy systems and motor drives.
Audio Amplifiers: The IRFB4110PBF can be utilized in high-power audio amplifiers for high-fidelity audio reproduction.
Inductive Heating: It finds application in induction heating systems for efficient and controlled heating of metallic objects.
LED Lighting: The IRFB4110PBF is suitable for LED driver circuits, providing efficient current control for LED lighting applications.
In summary, the IRFB4110PBF is a high-performance N-channel power MOSFET with low on-state resistance, high current handling, and fast switching characteristics. Its versatile features make it an excellent choice for a wide range of power applications, including power supplies, motor control, inverters, audio amplifiers, and LED lighting.
