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IRFB3207ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFB3207ZPBF
- Package: TO-220-3
- Datasheet:
- Stock: 2557
- Description: IRFB3207ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 4.1MOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 75V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 170A |
| Number of Elements | 1 |
| Power Dissipation-Max | 300W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300mW |
| Case Connection | DRAIN |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.1m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 6920pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
| Rise Time | 68ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 55 ns |
| Continuous Drain Current (ID) | 170A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 75V |
| Pulsed Drain Current-Max (IDM) | 670A |
| Dual Supply Voltage | 75V |
| Recovery Time | 54 ns |
| Nominal Vgs | 4 V |
| Height | 9.017mm |
| Length | 10.66mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The IRFB3207ZPBF is a HEXFET? single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for AC-to-DC, battery-operated drive, high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. Its Drain Source Voltage is 75v, and Continuous Drain Current is 170A
IRFB3207ZPBF Features
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
RoHS Compliant, Halogen-Free
IRFB3207ZPBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
