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IRFB3006PBF
  • IRFB3006PBF

IRFB3006PBF

IRFB3006PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFB3006PBF
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 2712
  • Description: IRFB3006PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 170A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8970pF @ 50V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 182ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 189 ns
Turn-Off Delay Time 118 ns
Continuous Drain Current (ID) 270A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0025Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 320 mJ
Height 9.02mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRFB3006PBF Description


IRFB3006PBF is an N-channel MOSFET manufactured by Infineon. The Infineon power MOSFET IRFB3006PBF utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, and load switches as well as battery-powered applications. The IRFB3006PBF is available in a variety of surface mount and through-hole packages with industry-standard footprints for ease of design. The optimized gate drive options enable designers the flexibility of selecting super, logic, or normal level drives.



IRFB3006PBF Features


  • Lead-Free

  • Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness

  • Fully Characterized Capacitance and Avalanche SOA

  • Enhanced body diode dV/dt and dI/dt Capability

  • Industry-standard through-hole power package

  • High-current carrying capability package



IRFB3006PBF Applications


  • DC motors

  • High-Efficiency Synchronous Rectification in SMPS

  • Uninterruptible Power Supply

  • High-Speed Power Switching

  • Hard Switched and High-Frequency Circuits


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