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IRF9Z34NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF9Z34NPBF
- Package: TO-220-3
- Datasheet:
- Stock: 6024
- Description: IRF9Z34NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 100mOhm |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -55V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 250 |
| Current Rating | -19A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Lead Pitch | 2.54mm |
| Number of Elements | 1 |
| Power Dissipation-Max | 68W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 56W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 19A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Rise Time | 55ns |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 41 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | -19A |
| Threshold Voltage | -4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -55V |
| Pulsed Drain Current-Max (IDM) | 68A |
| Dual Supply Voltage | -55V |
| Recovery Time | 82 ns |
| Nominal Vgs | -4 V |
| Height | 8.77mm |
| Length | 10.5156mm |
| Width | 4.69mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF9Z34NPBF Description
The fifth generation HEXFET of International Rectifier IRF9Z34NPBF uses advanced technology to achieve extremely low on-resistance, which, combined with the fast switching speed and rugged device design of HEXFET power MOSFET, provides demanders with extremely efficient and reliable devices that can be used in a variety of applications. TO-220 package is the first choice for all commercial industrial applications, and its power consumption is about 50 watts. TO-220 is widely accepted throughout the industry because of its low thermal resistance and low packaging cost.
IRF9Z34NPBF Features
Advanced Process Technology
Dynamic dv/dt Rating
175℃ Operating Temperature
Fast Switching P-Channel
Fully Avalanche Rated
Lead-Free
IRF9Z34NPBF Applications
commercial industrial applications
