IRF9540NSTRLPBF

IRF9540NSTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
NO: 376-IRF9540NSTRLPBF
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet:
Stock: 6266
Description: IRF9540NSTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Rds On (Max) @ Id, Vgs	117m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	23A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	67ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	51 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	-23A
Threshold Voltage	-4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-100V
Dual Supply Voltage	100V
Avalanche Energy Rating (Eas)	84 mJ
Recovery Time	210 ns
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-4 V
Height	5.084mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	117mOhm
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	Other Transistors
Voltage - Rated DC	-100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-23A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Voltage	100V
Power Dissipation-Max	3.1W Ta 110W Tc
Element Configuration	Single
Current	23A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.8W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	P-Channel
Transistor Application	SWITCHING