IRF9392PBF

MOSFET (Metal Oxide) P-Channel Tube 12.1mOhm @ 7.8A, 20V ±25V 1270pF @ 25V 14nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF9392PBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 8
  • Description: MOSFET (Metal Oxide) P-Channel Tube 12.1mOhm @ 7.8A, 20V ±25V 1270pF @ 25V 14nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width) (Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2007
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 12.1mOhm @ 7.8A, 20V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1270pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.8A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 47ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V 20V
Vgs (Max) ±25V
Fall Time (Typ) 58 ns
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) 9.8A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Input Capacitance 1.27nF
Rds On Max 12.1 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

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