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MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 2.9mOhm @ 22A, 10V ±20V 7305pF @ 15V 130nC @ 10V 30V DirectFET™ Isometric MX
- Manufacturer: Infineon Technologies
- NO: 376-IRF9383MTR1PBF
- Package: DirectFET™ Isometric MX
- Datasheet:
- Stock: 9439
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 2.9mOhm @ 22A, 10V ±20V 7305pF @ 15V 130nC @ 10V 30V DirectFET™ Isometric MX (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MX |
| Number of Pins | 7 |
| Supplier Device Package | DIRECTFET™ MX |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | HEXFET® |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 2.9MOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.1W Ta 113W Tc |
| Element Configuration | Dual |
| Power Dissipation | 2.1W |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7305pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 22A Ta 160A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Rise Time | 160ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 110 ns |
| Turn-Off Delay Time | 115 ns |
| Continuous Drain Current (ID) | 22A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Input Capacitance | 7.305nF |
| Drain to Source Resistance | 3.8mOhm |
| Rds On Max | 2.9 mΩ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
