IRF9204PBF

MOSFET (Metal Oxide) P-Channel Tube 16mOhm @ 37A, 10V ±20V 7676pF @ 25V 224nC @ 10V 40V TO-220-3


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF9204PBF
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 16370
  • Description: MOSFET (Metal Oxide) P-Channel Tube 16mOhm @ 37A, 10V ±20V 7676pF @ 25V 224nC @ 10V 40V TO-220-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 143W Tc
Power Dissipation 143W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 3V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 7676pF @ 25V
Current - Continuous Drain (Id) @ 25°C 56A Ta
Gate Charge (Qg) (Max) @ Vgs 224nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Input Capacitance 7.676nF
Drain to Source Resistance 23mOhm
Rds On Max 16 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.