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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 8.5MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 8.2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.5m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 14A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 8.1 ns |
| Continuous Drain Current (ID) | 14A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Nominal Vgs | 2.35 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
To reduce both conduction and switching losses, the IRF8721TRPBF has been optimized for characteristics that are crucial in synchronous buck operation, such as Rds(on) and gate charge. This product is suited for high efficiency DC-DC converters that power the latest generation of CPUs for Notebook and Netcom applications because of the lower total losses.
Gate Charge Is Extremely Low
At 4.5V VGS, RDS(on) is low.
Impedance at the Gate is Low
Avalanche Voltage and Current are fully characterized.
Maximum VGS Gate Rating: 20V
Lead-Free
Sync MOSFET control MOSFET -Buck
Power Converters for Notebook Processors
Isolated DC-DC Control MOSFET
In networking systems, converters are used.
Please send RFQ , we will respond immediately.