IRF840PBF

IRF840PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi


  • Manufacturer: Vishay Siliconix
  • NO: 880-IRF840PBF
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 4438
  • Description: IRF840PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 11 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 8A
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 850m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 8A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.85Ohm
Drain to Source Breakdown Voltage 500V
Recovery Time 970 ns
Nominal Vgs 4 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF840PBF Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1300pF @ 25V.This device has a continuous drain current (ID) of [8A], which is its maximum continuous current.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.In this device, the drain current is 8A, which is the maximum continuous current the device can conduct.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 49 ns.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is?the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRF840PBF Features


a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 49 ns
a threshold voltage of 4V

IRF840PBF Applications


There are a lot of Vishay Siliconix IRF840PBF applications of single MOSFETs transistors.

  • Battery Protection Circuit
  • Server power supplies
  • Industrial Power Supplies
  • LCD/LED/ PDP TV Lighting
  • Motor control
  • AC-DC Power Supply
  • Lighting
  • DC/DC converters
  • Micro Solar Inverter
  • Load switching

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