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IRF7815PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7815PBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3607
- Description: IRF7815PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 43m Ω @ 3.1A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1647pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Rise Time | 3.2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8.3 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 5.1A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.043Ohm |
| Drain to Source Breakdown Voltage | 150V |
| Avalanche Energy Rating (Eas) | 529 mJ |
| Recovery Time | 62 ns |
| Nominal Vgs | 4 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF7815PBF Description
IRF7815PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 150V. The operating temperature of the IRF7815PBF is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7815PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Breakdown Voltage of IRF7815PBF is 150V.
IRF7815PBF Features
Very Low RDS(on) at 10V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
20V VGS Max. Gate Rating
IRF7815PBF Applications
Synchronous MOSFET for Notebook Processor Power
Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
