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IRF7759L2TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7759L2TRPBF
- Package: DirectFET™ Isometric L8
- Datasheet:
- Stock: 9664
- Description: IRF7759L2TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric L8 |
| Number of Pins | 11 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | HEXFET® |
| JESD-609 Code | e1 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 9 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| JESD-30 Code | R-XBCC-N9 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 3.3W Ta 125W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 125W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.3m Ω @ 96A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 12222pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 26A Ta 375A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| Rise Time | 87ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 33 ns |
| Turn-Off Delay Time | 80 ns |
| Continuous Drain Current (ID) | 26A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0023Ohm |
| Drain to Source Breakdown Voltage | 75V |
| Pulsed Drain Current-Max (IDM) | 640A |
| Avalanche Energy Rating (Eas) | 257 mJ |
| Height | 508μm |
| Length | 9.144mm |
| Width | 7.112mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF7759L2TRPBF Description
The IRF7759L2TRPBF combines the latest HEXFET? Power MOSFET Silicon technology with innovative DirectFETTM packaging to provide the lowest on-state resistance in a package that is smaller than a D2 PAK and has a profile of only 0.7 mm. When application note AN-1035 addressing manufacturing methods and procedures is followed, the DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. The DirectFET packaging enables for dual-sided cooling in power systems to maximize thermal transmission.
IRF7759L2TRPBF Features
Halogen-free and RoHS compliant
Lead-free (qualified for reflow up to 260°C)
Isolated Converter with High Performance
Socket for Primary Switch
Synchronous Rectification Optimized
Low Transmission Losses
Immunity to Cdv/dt
(0.7mm) Low Profile
Compatible with dual-sided cooling
Surface Mount Techniques that are compatible
Industrially trained
IRF7759L2TRPBF Applications
The IRF7759L2TRPBF is designed for synchronous rectification and high frequency switching. The device's low total losses, combined with its great thermal performance, enable high efficiency and low temperatures, which are critical for system reliability, making it perfect for high-performance power converters.
