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MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 18mOhm @ 8A, 10V ±20V 2774pF @ 25V 88nC @ 10V 30V 8-TSSOP (0.173, 4.40mm Width)
- Manufacturer: Infineon Technologies
- NO: 376-IRF7705TRPBF
- Package: 8-TSSOP (0.173, 4.40mm Width)
- Datasheet:
- Stock: 1100
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 18mOhm @ 8A, 10V ±20V 2774pF @ 25V 88nC @ 10V 30V 8-TSSOP (0.173, 4.40mm Width) (Kg)
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| Parameters | |
|---|---|
| Series | HEXFET® |
| Published | 2008 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| Resistance | 18MOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 2 |
| Power Dissipation-Max | 1.5W Ta |
| Power Dissipation | 1.5W |
| Turn On Delay Time | 18 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2774pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 88nC @ 10V |
| Rise Time | 35ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 128 ns |
| Turn-Off Delay Time | 270 ns |
| Continuous Drain Current (ID) | -8A |
| Threshold Voltage | -2.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Dual Supply Voltage | -30V |
| Input Capacitance | 2.774nF |
| Drain to Source Resistance | 30mOhm |
| Rds On Max | 18 mΩ |
| Nominal Vgs | -2.5 V |
| Height | 1.0414mm |
| Length | 3.0988mm |
| Width | 4.4958mm |
| REACH SVHC | No SVHC |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-TSSOP |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
