IRF7484TRPBF

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10mOhm @ 14A, 7V ±8V 3520pF @ 25V 100nC @ 7V 40V 8-SOIC (0.154, 3.90mm Width)


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF7484TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 1806
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10mOhm @ 14A, 7V ±8V 3520pF @ 25V 100nC @ 7V 40V 8-SOIC (0.154, 3.90mm Width) (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10mOhm @ 14A, 7V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3520pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Gate Charge (Qg) (Max) @ Vgs 100nC @ 7V
Rise Time 5ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 7V
Vgs (Max) ±8V
Fall Time (Typ) 58 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 40V
Input Capacitance 3.52nF
Drain to Source Resistance 10mOhm
Rds On Max 10 mΩ
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.