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IRF7413TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7413TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 5779
- Description: IRF7413TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 11mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | ULTRA LOW RESISTANCE |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 13A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Row Spacing | 6.3 mm |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 8.6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 11m Ω @ 7.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 13A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 79nC @ 10V |
| Rise Time | 50ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 46 ns |
| Turn-Off Delay Time | 52 ns |
| Continuous Drain Current (ID) | 13A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Dual Supply Voltage | 30V |
| Avalanche Energy Rating (Eas) | 260 mJ |
| Recovery Time | 110 ns |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 3 V |
| Height | 1.75mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
IRF7413TRPBF Description
The IRF7413TRPBF is a HEXFET? single N-channel Power MOSFET that utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the ruggedized device design provides an extremely efficient and reliable operation for use in battery and load management applications. The IRF7413PBF is a fifth-generation single N-channel HEXFET? Power MOSFET that utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation for use in a wide variety of applications. It has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
IRF7413TRPBF Features
Fast switching
100% Rg tested
Low switching losses
Dynamic dV/dt rating
Low conduction losses
Generation V technology
Ultra-low ON-resistance
IRF7413TRPBF Applications
Infrared
Vapor phase
High side switch
Notebook CPU core
PCB mount application
Wave soldering techniques
