IRF740PBF

IRF740PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi


  • Manufacturer: Vishay Siliconix
  • NO: 880-IRF740PBF
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 10029
  • Description: IRF740PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 11 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 550MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Current Rating 10A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 400V
Dual Supply Voltage 400V
Input Capacitance 1.4nF
Recovery Time 790 ns
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 550mOhm
Rds On Max 550 mΩ
Nominal Vgs 4 V
Height 19.89mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF740PBF Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1400pF @ 25V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 400V, and this device has a drainage-to-source breakdown voltage of 400VV.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 550mOhm exists between the drain and source.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.Operating this transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRF740PBF Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 550mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)

IRF740PBF Applications


There are a lot of Vishay Siliconix IRF740PBF applications of single MOSFETs transistors.

  • Industrial Power Supplies
  • Telecom 1 Sever Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • DC/DC converters
  • Micro Solar Inverter
  • Motor control
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Load switching
  • Solar Inverter

In Stock

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