IRF7241TRPBF

IRF7241TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF7241TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 2425
  • Description: IRF7241TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 41MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -40V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -6.2A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 24 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 41m Ω @ 6.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.2A Ta
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 280ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 210 ns
Continuous Drain Current (ID) -6.2A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Dual Supply Voltage -40V
Recovery Time 48 ns
Nominal Vgs -3 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
IRF7241TRPBF Description

International Rectifier's IRF7241TRPBF Power MOSFETs use innovative processing techniques to achieve extraordinarily low on-resistance per silicon area. When paired with the ruggedized device design that IRF7241TRPBF HEXFET power MOSFETs are known for, the designer has an exceptionally efficient and dependable device for use in battery and load control applications.
IRF7241TRPBF Features

Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100KHz
Industry standard surface-mount power package
Capable of being wave-soldered
Available in Tape & Reel
Lead-Free
IRF7241TRPBF Applications

Used in LED dimmers or flashers
Used in USP
Used in switching high power devices
Used in inverter Circuits
Used in instrumentation projects
Used in embedded projects
Used in DC-DC Converters
Used in control speed of motors
Used in fast switching applications
Used in high voltage applications
Used in AC motor drivers and controllers applications
Used in DC Motor drivers and controllers applications
Used in battery charger circuits
Used in lighting and ballast circuits

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