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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.3m Ω @ 33A, 10V ±16V 4160pF @ 13V 39nC @ 4.5V DirectFET™ Isometric MX
- Manufacturer: Infineon Technologies
- NO: 376-IRF6894MTRPBF
- Package: DirectFET™ Isometric MX
- Datasheet:
- Stock: 9692
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.3m Ω @ 33A, 10V ±16V 4160pF @ 13V 39nC @ 4.5V DirectFET™ Isometric MX (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MX |
| Number of Pins | 7 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 1.3MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| JESD-30 Code | R-XBCC-N3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.1W Ta 54W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 54W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.3m Ω @ 33A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4160pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 32A Ta 160A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 4.5V |
| Rise Time | 42ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 32A |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 33A |
| Drain to Source Breakdown Voltage | 25V |
| Pulsed Drain Current-Max (IDM) | 260A |
| FET Feature | Schottky Diode (Body) |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF6894MTRPBF Description
IRF6894MPbF combines the latest HEXFET power MOSFET silicon technology with advanced DirectFET silicon packaging to achieve the lowest on-resistance in a SO-8 package with a package area of only 0.7 mm. The DirectFETPCB package is compatible with existing layout geometry used in power applications, diamond assembly equipment and gas phase, infrared or convection welding technologies. Follow the application notes on manufacturing methods and processes AN-1035. The DirectFET seal package allows double-sided cooling to maximize heat transfer in the power system, increasing the previous optimal thermal resistance by 80 per cent. The IRF6894MPbF balances industry-leading on-resistance while minimizing gate charge while reducing on-and switching losses. This part includes an integrated Schottky diode, which can reduce the Qrr of the bulk drain diode and further reduce the loss in the synchronous buck circuit. The reduced loss makes it ideal for high-frequency / high-efficiency DC-DC converters to power high-current loads, such as the latest generation of microprocessors. IRF6894MPbF optimizes the key parameters in the Sync FET socket of the synchronous buck converter.
IRF6894MTRPBF Features
RoHs Compliant Containing No Lead and Bromide ?
Integrated Monolithic Schottky Diode
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible ?
Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques ?
100% Rg tested
Footprint compatible to DirectFET
IRF6894MTRPBF Applications
high-frequency / high-efficiency DC-DC converters
