You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | HEXFET® |
| JESD-609 Code | e1 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| JESD-30 Code | R-XBCC-N3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.8W Ta 89W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.9 ns |
| FET Type | N-Channel |
| Transistor Application | AMPLIFIER |
| Rds On (Max) @ Id, Vgs | 56m Ω @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1411pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A Ta 28A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Rise Time | 7.8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 5.8 ns |
| Continuous Drain Current (ID) | 4.9A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 28A |
| Drain to Source Breakdown Voltage | 150V |
| Pulsed Drain Current-Max (IDM) | 39A |
| Avalanche Energy Rating (Eas) | 33 mJ |
| Height | 508μm |
| Length | 6.35mm |
| Width | 5.0546mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MZ |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
This digital audio MOSFET is designed for Class D audio amplifier applications. The MOSFET uses the latest technology to achieve a low on-resistance per silicon area. In addition, gate charge, body diode reverse recovery and internal gate resistance are optimized to improve the key performance factors of Class D audio amplifier, such as efficiency, THD and EMI. IRF6775MPbF equipment adopts DirectFETTM packaging technology. Compared with traditional wire-welded SOIC packaging, DirectFETTM packaging technology provides lower parasitic inductance and resistance. Lower inductors improve EMI performance by reducing the voltage ringing associated with fast current transients. The DirectFETTM package is compatible with existing layout geometry used in power applications, printed circuit board assembly equipment and gas phase, infrared or convection welding technologies, if the application instructions for manufacturing methods and processes are followed, AN-1035. The DirectFETTM package also allows double-sided cooling to maximize heat transfer in the power system, thereby increasing thermal resistance and power consumption. The combination of these features makes the MOSFET an efficient, rugged and reliable device for Class D audio amplifier applications.
? Latest MOSFET Silicon technology
? Key parameters optimized for Class-D audio amplifier
applications
? Low RDS(on) for improved efficiency
? Low Qg for better THD and improved efficiency
? Low Qrr for better THD and lower EMI
? Low package stray inductance for reduced ringing and lower EMI
? Can deliver up to 250W per channel into 4Ω Load in
Half-Bridge Configuration Amplifier
? Dual sided cooling compatible
Compatible with existing surface mount technologies
RoHS compliant containing no lead or bromide
Lead-Free (Qualified up to 260°C Reflow)
Class D audio amplifier applications
Please send RFQ , we will respond immediately.