IRF6775MTRPBF

IRF6775MTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF6775MTRPBF
  • Package: DirectFET™ Isometric MZ
  • Datasheet: pdf
  • Stock: 8788
  • Description: IRF6775MTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET®
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 5.9 ns
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 56m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1411pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.9A Ta 28A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 7.8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 5.8 ns
Continuous Drain Current (ID) 4.9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 28A
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 39A
Avalanche Energy Rating (Eas) 33 mJ
Height 508μm
Length 6.35mm
Width 5.0546mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MZ
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ

IRF6775MTRPBF   Description


  This digital audio MOSFET is designed for Class D audio amplifier applications. The MOSFET uses the latest technology to achieve a low on-resistance per silicon area. In addition, gate charge, body diode reverse recovery and internal gate resistance are optimized to improve the key performance factors of Class D audio amplifier, such as efficiency, THD and EMI. IRF6775MPbF equipment adopts DirectFETTM packaging technology. Compared with traditional wire-welded SOIC packaging, DirectFETTM packaging technology provides lower parasitic inductance and resistance. Lower inductors improve EMI performance by reducing the voltage ringing associated with fast current transients. The DirectFETTM package is compatible with existing layout geometry used in power applications, printed circuit board assembly equipment and gas phase, infrared or convection welding technologies, if the application instructions for manufacturing methods and processes are followed, AN-1035. The DirectFETTM package also allows double-sided cooling to maximize heat transfer in the power system, thereby increasing thermal resistance and power consumption. The combination of these features makes the MOSFET an efficient, rugged and reliable device for Class D audio amplifier applications.

 

IRF6775MTRPBF    Features


? Latest MOSFET Silicon technology

? Key parameters optimized for Class-D audio amplifier

 applications

? Low RDS(on) for improved efficiency

? Low Qg for better THD and improved efficiency

? Low Qrr for better THD and lower EMI

? Low package stray inductance for reduced ringing and lower EMI

? Can deliver up to 250W per channel into 4Ω Load in

 Half-Bridge Configuration Amplifier

? Dual sided cooling compatible

 Compatible with existing surface mount technologies

 RoHS compliant containing no lead or bromide

Lead-Free (Qualified up to 260°C Reflow)

 

IRF6775MTRPBF    Applications


Class D audio amplifier applications


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