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IRF6718L2TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF6718L2TRPBF
- Package: DirectFET™ Isometric L6
- Datasheet:
- Stock: 4911
- Description: IRF6718L2TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric L6 |
| Number of Pins | 13 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | HEXFET® |
| JESD-609 Code | e1 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 7 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| JESD-30 Code | R-XBCC-N7 |
| Number of Elements | 1 |
| Power Dissipation-Max | 4.3W Ta 83W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 4.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 67 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 0.7m Ω @ 61A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 6500pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 61A Ta 270A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 4.5V |
| Rise Time | 140ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 53 ns |
| Turn-Off Delay Time | 47 ns |
| Continuous Drain Current (ID) | 61A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 270A |
| Drain-source On Resistance-Max | 0.0007Ohm |
| Drain to Source Breakdown Voltage | 25V |
| Pulsed Drain Current-Max (IDM) | 490A |
| Avalanche Energy Rating (Eas) | 530 mJ |
| Height | 508μm |
| Length | 9.144mm |
| Width | 7.1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF6718L2TRPBF Description
To achieve the lowest on-state resistance in a package with the footprint of a D-pak, the IRF6718L2TRPBF blends the latest HEXFET? Power MOSFET Silicon technology with innovative DirectFET? packaging. When application note AN-1035 addressing manufacturing methods and procedures is followed, the DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. Dual-sided cooling is possible with the DirectFET package, allowing for maximum thermal transfer in power systems.
IRF6718L2TRPBF Features
?RoHS-compliant, with no lead or bromide
?Compatible with dual-sided cooling
?Inductance of the package is really low.
?Extremely Low ROS|CN for Lower Conduction Losses
?It's designed for Active O-Ring and Efuse applications.
IRF6718L2TRPBF Applications
Switching applications
