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IRF6712STRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF6712STRPBF
- Package: DirectFET™ Isometric SQ
- Datasheet:
- Stock: 2641
- Description: IRF6712STRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric SQ |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | HEXFET® |
| JESD-609 Code | e1 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 4.9MOhm |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| JESD-30 Code | R-XBCC-N2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.2W Ta 36W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 36W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.9m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1570pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 17A Ta 68A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Rise Time | 40ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 17A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 25V |
| Height | 506μm |
| Length | 4.826mm |
| Width | 3.95mm |
IRF6712STRPBF Description
IRF6712STRPBF is a kind of HEXFET? power MOSFET developed by Infineon Technologies. The lowest on-state resistance in a package can be realized based on the advanced DirectFET? packaging that can also make dual-sided cooling possible to maximize thermal transfer in power systems. It is able to provide low resistance, low charge, as well as low conduction and switching losses.
IRF6712STRPBF Features
Low conduction and switching losses
Ultra-low package inductance
Dual-sided cooling compatible
Advanced DirectFET? packaging
Low on-state resistance
IRF6712STRPBF Applications
Sync.FET and some Control FET application
High-efficiency DC-DC converters
