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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.8mOhm @ 19A, 10V ±20V 1810pF @ 13V 20nC @ 4.5V 25V DirectFET™ Isometric SQ
- Manufacturer: Infineon Technologies
- NO: 376-IRF6711STR1PBF
- Package: DirectFET™ Isometric SQ
- Datasheet:
- Stock: 8817
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.8mOhm @ 19A, 10V ±20V 1810pF @ 13V 20nC @ 4.5V 25V DirectFET™ Isometric SQ (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric SQ |
| Number of Pins | 5 |
| Supplier Device Package | DIRECTFET™ SQ |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.2W Ta 42W Tc |
| Power Dissipation | 42W |
| Turn On Delay Time | 7.7 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1810pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 19A Ta 84A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 25V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5.4 ns |
| Turn-Off Delay Time | 7.1 ns |
| Continuous Drain Current (ID) | 12A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 25V |
| Input Capacitance | 1.81nF |
| Drain to Source Resistance | 6.5mOhm |
| Rds On Max | 3.8 mΩ |
| Nominal Vgs | 1.8 V |
| Height | 506μm |
| Length | 4.826mm |
| Width | 3.95mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
