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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.9mOhm @ 13A, 10V ±20V 1010pF @ 15V 10nC @ 4.5V 30V DirectFET™ Isometric S1
- Manufacturer: Infineon Technologies
- NO: 376-IRF6708S2TR1PBF
- Package: DirectFET™ Isometric S1
- Datasheet:
- Stock: 10749
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.9mOhm @ 13A, 10V ±20V 1010pF @ 15V 10nC @ 4.5V 30V DirectFET™ Isometric S1 (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric S1 |
| Number of Pins | 6 |
| Supplier Device Package | DIRECTFET S1 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | HEXFET® |
| Published | 2011 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta 20W Tc |
| Element Configuration | Single |
| Power Dissipation | 20W |
| Turn On Delay Time | 9.1 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 13A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Rise Time | 27ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 13A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 1.01nF |
| Drain to Source Resistance | 14.3mOhm |
| Rds On Max | 8.9 mΩ |
| Nominal Vgs | 1.8 V |
| Height | 490μm |
| Length | 3.95mm |
| Width | 3.95mm |
| REACH SVHC | No SVHC |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
