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IRF6668TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF6668TRPBF
- Package: DirectFET™ Isometric MZ
- Datasheet:
- Stock: 2372
- Description: IRF6668TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 80V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Current Rating | 55A |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.8W Ta 89W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 89W |
| Case Connection | DRAIN |
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 15m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1320pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 55A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Rise Time | 13ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 23 ns |
| Turn-Off Delay Time | 7.1 ns |
| Continuous Drain Current (ID) | 55mA |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.015Ohm |
| Drain to Source Breakdown Voltage | 80V |
| Pulsed Drain Current-Max (IDM) | 170A |
| Avalanche Energy Rating (Eas) | 24 mJ |
| Height | 533.4μm |
| Length | 6.35mm |
| Width | 5.0546mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MZ |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | HEXFET® |
| JESD-609 Code | e1 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
IRF6668TRPBF Description
The IRF6668TRPBF combines the latest HEXFET? Power MOSFET Silicon technology with innovative DirectFETTM packaging to provide the lowest on-state resistance in a SO-8-sized device with a 0.7 mm profile. Existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering processes are all compatible with the DirectFET package. In terms of manufacturing methods and procedures, Application Note AN-1035 is followed. The DirectFET package enables dual-sided cooling in power systems, resulting in an 80 percent increase in thermal resistance over the previous best.
IRF6668TRPBF Features
Ideal for Isolated High-Performance Converters
Synchronous Rectification Optimized Primary Switch Socket
Low Losses in Conduction
Immunity to Cdv/dt is high.
Low-profile (about 0.7mm)
IRF6668TRPBF Applications
Primary Switch for Telecom DC-DC Power Supplies with a High Frequency of 48V/60V
Synchronous Rectifier on the Secondary Side
Active O-Ring and Hot Swap
