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ContactIRF6665TR1
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 62m Ω @ 5A, 10V ±20V 530pF @ 25V 13nC @ 10V DirectFET™ Isometric SH
- Manufacturer: Infineon Technologies
- NO: 376-IRF6665TR1
- Package: DirectFET™ Isometric SH
- Datasheet:
- Stock: 6887
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 62m Ω @ 5A, 10V ±20V 530pF @ 25V 13nC @ 10V DirectFET™ Isometric SH (Kg)
- Delivery:
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric SH |
| Number of Pins | 6 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Configuration | Single |
| Power Dissipation-Max | 2.2W Ta 42W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 42W |
| Turn On Delay Time | 7.4 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 62m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A Ta 19A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Rise Time | 2.8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4.3 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 4.2A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 19A |
| Drain to Source Breakdown Voltage | 100V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
