IRF6643TRPBF

IRF6643TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF6643TRPBF
  • Package: DirectFET™ Isometric MZ
  • Datasheet: pdf
  • Stock: 1275
  • Description: IRF6643TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

authentication (1) authentication (2) authentication (3) authentication (4) authentication (5) authentication (6) authentication (7) authentication (8) authentication (9)

Purchase & Inquiry

Transport

User guide

Purchase

You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34.5m Ω @ 7.6A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.2A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.4 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 6.2A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 76A
Height 508μm
Length 6.35mm
Width 5.0546mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MZ
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power

IRF6643TRPBF    Description


  This digital audio MOSFET IRF6643TRPBF is designed for Class D audio amplifier applications. The MOSFET uses the latest technology to achieve a low on-resistance per silicon area. In addition, gate charge, body diode reverse recovery and internal gate resistance are optimized to improve the key performance factors of Class D audio amplifier, such as efficiency, THD and EMI. IRF6643PbF devices are packaged with Direct FET technology. Compared with traditional wire-bonded SOIC packaging, Direct FET packaging technology provides lower parasitic inductance and resistance. Lower inductors improve EMI performance by reducing the voltage ringing associated with fast current transients. If you follow the AN-1035 application instructions on manufacturing methods and processes, the DirectFET package is compatible with existing layout geometry used in power applications, printed circuit board assembly equipment and gas phase, infrared or convection welding technologies. The DirectFET package also allows double-sided cooling to maximize the heat transfer of the power system, thereby increasing thermal resistance and power consumption. The combination of these features makes the MOSFET an efficient, rugged and reliable device for Class D audio amplifier applications.



IRF6643TRPBF     Features


? Latest MOSFET silicon technology

? Key parameters optimized for Class-D audio amplifier

applications

? Low RDS(on) for improved efficiency

? Low Qg for better THD and improved efficiency

? Low Qrr for better THD and lower EMI

? Low package stray inductance for reduced ringing and lower

EMI

? Can deliver up to 200 W per channel into 8Ω load in half-bridge

configuration amplifier

? Dual sided cooling compatible

? Compatible with existing surface mount technologies

? RoHS compliant, halogen-free

? Lead-free (qualified up to 260°C reflow)

 


 

 IRF6643TRPBF Applications

Class D audio amplifier



In Stock

Please send RFQ , we will respond immediately.