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ContactIRF6633TR1
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.6mOhm @ 16A, 10V ±20V 1250pF @ 10V 17nC @ 4.5V 20V DirectFET™ Isometric MP
- Manufacturer: Infineon Technologies
- NO: 376-IRF6633TR1
- Package: DirectFET™ Isometric MP
- Datasheet:
- Stock: 1609
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.6mOhm @ 16A, 10V ±20V 1250pF @ 10V 17nC @ 4.5V 20V DirectFET™ Isometric MP (Kg)
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| Parameters | |
|---|---|
| Published | 2006 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Termination | SMD/SMT |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 2.3W Ta 42W Tc |
| Power Dissipation | 2.3W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1250pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 16A Ta 59A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| Rise Time | 31ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4.3 ns |
| Turn-Off Delay Time | 12 ns |
| Reverse Recovery Time | 18 ns |
| Continuous Drain Current (ID) | 16A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 20V |
| Input Capacitance | 1.25nF |
| Rds On Max | 5.6 mΩ |
| Nominal Vgs | 1.8 V |
| REACH SVHC | No SVHC |
| RoHS Status | Non-RoHS Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MP |
| Number of Pins | 7 |
| Supplier Device Package | DIRECTFET™ MP |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | HEXFET® |
