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ContactIRF6619TR1
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.2mOhm @ 30A, 10V ±20V 5040pF @ 10V 57nC @ 4.5V 20V DirectFET™ Isometric MX
- Manufacturer: Infineon Technologies
- NO: 376-IRF6619TR1
- Package: DirectFET™ Isometric MX
- Datasheet:
- Stock: 5736
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.2mOhm @ 30A, 10V ±20V 5040pF @ 10V 57nC @ 4.5V 20V DirectFET™ Isometric MX (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MX |
| Number of Pins | 7 |
| Supplier Device Package | DIRECTFET™ MX |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | HEXFET® |
| Published | 2005 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Termination | SMD/SMT |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Voltage - Rated DC | 20V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 30A |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.8W Ta 89W Tc |
| Power Dissipation | 2.8W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.45V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5040pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 30A Ta 150A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 4.5V |
| Rise Time | 71ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 9.3 ns |
| Turn-Off Delay Time | 25 ns |
| Reverse Recovery Time | 29 ns |
| Continuous Drain Current (ID) | 24A |
| Threshold Voltage | 2.45V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 20V |
| Dual Supply Voltage | 20V |
| Input Capacitance | 5.04nF |
| Drain to Source Resistance | 1.65Ohm |
| Rds On Max | 2.2 mΩ |
| Nominal Vgs | 2.45 V |
| REACH SVHC | No SVHC |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Lead Free |
