IRF6616TR1PBF

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5mOhm @ 19A, 10V ±20V 3765pF @ 20V 44nC @ 4.5V 40V DirectFET™ Isometric MX


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF6616TR1PBF
  • Package: DirectFET™ Isometric MX
  • Datasheet: pdf
  • Stock: 13352
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5mOhm @ 19A, 10V ±20V 3765pF @ 20V 44nC @ 4.5V 40V DirectFET™ Isometric MX (Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 5
Supplier Device Package DIRECTFET™ MX
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 5MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Power Dissipation 2.8W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3765pF @ 20V
Current - Continuous Drain (Id) @ 25°C 19A Ta 106A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
Rise Time 19ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.4 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Dual Supply Voltage 40V
Input Capacitance 3.765nF
Recovery Time 23 ns
Drain to Source Resistance 6.2mOhm
Rds On Max 5 mΩ
Nominal Vgs 1.8 V
Height 508μm
Length 6.35mm
Width 5.05mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.