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IRF6613TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF6613TRPBF
- Package: DirectFET™ Isometric MT
- Datasheet:
- Stock: 892
- Description: IRF6613TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MT |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | HEXFET® |
| JESD-609 Code | e1 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 3.4MOhm |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 40V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 23A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-XBCC-N3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.8W Ta 89W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 89W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.4m Ω @ 23A, 10V |
| Vgs(th) (Max) @ Id | 2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5950pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 23A Ta 150A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 4.5V |
| Rise Time | 47ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4.9 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 150mA |
| Threshold Voltage | 2.25V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 40V |
| Avalanche Energy Rating (Eas) | 200 mJ |
| Height | 508μm |
| Length | 6.35mm |
| Width | 5.0546mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF6613TRPBF Description
The IRF6613TRPBF combines the most recent HEXFET? Power MOSFET Silicon technology with cutting-edge DirectFETTM packaging to produce a package with a SO-8-sized footprint and a 0.7 mm profile that offers the lowest on-state resistance possible. When application note AN-1035 detailing the manufacturing processes and methods is adhered to, the DirectFET package is compatible with current layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. The DirectFET package enables two sided cooling to increase thermal transfer in power systems and improve thermal resistance by 80% over the prior best.
IRF6613TRPBF Features
?Lead-Free (Qualified for Reflow up to 260°C)
MOSFETs with specific applications
?Perfect for DC-DC converters in CPU cores
?Minimum Production Losses
?High immunity to Cdv/dt
? Low Profile (around 0.7mm)
?1 Compatible with Dual Sided Cooling
IRF6613TRPBF Applications
Switching applications
