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ContactIRF630PBF
MOSFET (Metal Oxide) N-Channel Tube 400mOhm @ 5.4A, 10V ±20V 800pF @ 25V 43nC @ 10V 200V TO-220-3
- Manufacturer: Vishay Siliconix
- NO: 880-IRF630PBF
- Package: TO-220-3
- Datasheet:
- Stock: 23283
- Description: MOSFET (Metal Oxide) N-Channel Tube 400mOhm @ 5.4A, 10V ±20V 800pF @ 25V 43nC @ 10V 200V TO-220-3 (Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-220AB |
| Weight | 6.000006g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 400mOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 74W Tc |
| Element Configuration | Single |
| Power Dissipation | 74W |
| Turn On Delay Time | 9.4 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 9A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Rise Time | 28ns |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 39 ns |
| Continuous Drain Current (ID) | 9A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 200V |
| Input Capacitance | 800pF |
| Drain to Source Resistance | 400mOhm |
| Rds On Max | 400 mΩ |
| Height | 9.01mm |
| Length | 10.41mm |
| Width | 4.7mm |
| REACH SVHC | Unknown |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
