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IRF6215PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF6215PBF
- Package: TO-220-3
- Datasheet:
- Stock: 2964
- Description: IRF6215PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Fall Time (Typ) | 37 ns |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -150V |
| Dual Supply Voltage | -150V |
| Nominal Vgs | -4 V |
| Current - Continuous Drain (Id) @ 25°C | 13A Tc |
| Drain to Source Voltage (Vdss) | 150V |
| Pulsed Drain Current-Max (IDM) | 44A |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Packaging | Tube |
| Published | 1998 |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Length | 10.5156mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Current Rating | -13A |
| Radiation Hardening | No |
| Number of Pins | 3 |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Package / Case | TO-220-3 |
| REACH SVHC | No SVHC |
| Lead Pitch | 2.54mm |
| Height | 15.24mm |
| Width | 4.69mm |
| Resistance | 290mOhm |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~175°C TJ |
| Voltage - Rated DC | -150V |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| Subcategory | Other Transistors |
| Number of Elements | 1 |
| JEDEC-95 Code | TO-220AB |
| Case Connection | DRAIN |
| Element Configuration | Single |
| Power Dissipation | 110W |
| Turn On Delay Time | 14 ns |
| Threshold Voltage | -4V |
| Power Dissipation-Max | 110W Tc |
| Recovery Time | 240 ns |
| Continuous Drain Current (ID) | -13A |
| Transistor Application | SWITCHING |
| Turn-Off Delay Time | 53 ns |
| Transistor Element Material | SILICON |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 290m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
| Rise Time | 36ns |
IRF6215PBF Description
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. At power dissipation values of around 50 watts, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and low packaging cost contribute to its widespread use in the industry, according to IRF6215PBF datasheet.
IRF6215PBF Features
Lead-Free
P-Channel
Fast Switching
Dynamic dv/dt Rating
Fully Avalanche Rated
Advanced Process Technology
175°C Operating Temperature
IRF6215PBF Applications
Switching
Commercial industrial applications
