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ContactIRF5802TRPBF
IRF5802TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF5802TRPBF
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 3860
- Description: IRF5802TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 1.2Ohm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 150V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 900mA |
| Number of Elements | 1 |
| Power Dissipation-Max | 2W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.2 Ω @ 540mA, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 88pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 900mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 10V |
| Rise Time | 1.6ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 9.2 ns |
| Turn-Off Delay Time | 7.5 ns |
| Continuous Drain Current (ID) | 900mA |
| Threshold Voltage | 5.5V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 0.9A |
| Drain to Source Breakdown Voltage | 150V |
| Pulsed Drain Current-Max (IDM) | 7A |
| Dual Supply Voltage | 150V |
| Avalanche Energy Rating (Eas) | 9.5 mJ |
| Nominal Vgs | 5.5 V |
| Height | 900μm |
| Length | 2.9972mm |
| Width | 1.4986mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
IRF5802TRPBF Features
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Lead-Free
Halogen-Free
IRF5802TRPBF Applications
High-frequency DC-DC converters
