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MOSFET (Metal Oxide) N-Channel Tube 44m Ω @ 16A, 10V ±20V 1960pF @ 25V 71nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
- Manufacturer: Infineon Technologies
- NO: 376-IRF540NLPBF
- Package: TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet:
- Stock: 173
- Description: MOSFET (Metal Oxide) N-Channel Tube 44m Ω @ 16A, 10V ±20V 1960pF @ 25V 71nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA (Kg)
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| Parameters | |
|---|---|
| Power Dissipation-Max | 130W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 130W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 44m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 33A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V |
| Rise Time | 35ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 39 ns |
| Continuous Drain Current (ID) | 33A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Nominal Vgs | 4 V |
| Height | 9.65mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 44MOhm |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 33A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
IRF540NLPBF MOSFET Description
The IRF540 is a power MOSFET intended to drive high current loads. It can handle a maximum load of 23A and a maximum load voltage of 100V DC. It employs trench technology, allowing it to achieve a high level of driving capability. It can be used for switching as well as amplification. This transistor has various advantageous characteristics that make it suitable for use as a switch. Because it can execute high-speed switching, it can be utilized in many applications where you need to swap the load quickly, such as UPS.
IRF540NLPBF MOSFET Features
Planar cell structure for comprehensive SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry-standard through-hole power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave-soldered
IRF540NLPBF MOSFET Applications
Motor Driver Applications
Computer Related Applications
Fast Switching Applications
Uninterruptible Power Supplies
Solar Battery Chargers
Battery Chargers
Solar Uninterruptible Power Supplies
