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ContactIRF5305STRLPBF
IRF5305STRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF5305STRLPBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 9671
- Description: IRF5305STRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 60mOhm |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -55V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -31A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.8W Ta 110W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 110W |
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 31A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Rise Time | 66ns |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 63 ns |
| Turn-Off Delay Time | 39 ns |
| Continuous Drain Current (ID) | -31A |
| Threshold Voltage | -4V |
| JEDEC-95 Code | TO-252 |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -55V |
| Dual Supply Voltage | -55V |
| Avalanche Energy Rating (Eas) | 280 mJ |
| Recovery Time | 110 ns |
| Max Junction Temperature (Tj) | 175°C |
| Nominal Vgs | -4 V |
| Height | 5.084mm |
| Length | 10.668mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
IRF5305STRLPBF Description
IRF5305STRLPBF is a P-channel MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 55V. The operating temperature of the IRF5305STRLPBF is -55°C~175°C TJ and its maximum power dissipation is 110W. IRF5305STRLPBF has 3 pins and it is available in Tape & Reel packaging way.
IRF5305STRLPBF Features
Max Junction Temperature (Tj): 175°C
Avalanche Energy Rating (Eas): 280 mJ
Drain to Source Breakdown Voltage: -55V
Continuous Drain Current (ID): -31A
IRF5305STRLPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
