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ContactIRF5210STRLPBF
IRF5210STRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF5210STRLPBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 9086
- Description: IRF5210STRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 38A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2780pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 38A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
| Rise Time | 63ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 55 ns |
| Turn-Off Delay Time | 72 ns |
| Continuous Drain Current (ID) | -40A |
| Threshold Voltage | -4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -100V |
| Dual Supply Voltage | 100V |
| Recovery Time | 260 ns |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | -4 V |
| Height | 4.83mm |
| Length | 10.668mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1998 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 60mOhm |
| Additional Feature | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -40A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.1W Ta 170W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.8W |
IRF5210STRLPBF Description
IRF5210STRLPBF power MOSFETs are made with proven silicon methods and can be used in a variety of applications including DC motors, inverters, SMPS, lights, load switches, and battery-powered applications. For ease of design, the IRF5210STRLPBF is offered in a variety of surface mount and through-hole packages with industry-standard footprints.
IRF5210STRLPBF Features
Advanced Process Technology
Ultra-Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from IRF5210S/L
P-Channel
Lead-Free
IRF5210STRLPBF Applications
Switching applications
Industrial: Aerospace & defense/Appliances/Building automation/Electronic point of sale (EPOS)/Factory automation & control/Grid infrastructure/Industrial transport (non-car & non-light truck)/Lighting/Medical/Motor drives/Power delivery/Pro audio, video & signage/Test & measurement
Enterprise systems: Datacenter & enterprise computing/Enterprise machine/Enterprise projectors
Personal electronics: Connected peripherals & printers/Data storage/Gaming/Home theater & entertainment/Mobile phones/PC & notebooks/Portable electronics/Tablets/TV/Wearables (non-medical)
