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IRF5210PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF5210PBF
- Package: TO-220-3
- Datasheet:
- Stock: 4194
- Description: IRF5210PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 1998 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 60mOhm |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -100V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 250 |
| Current Rating | -40A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Lead Pitch | 2.54mm |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 200W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 200W |
| Case Connection | DRAIN |
| Turn On Delay Time | 17 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 24A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| Rise Time | 86ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 81 ns |
| Turn-Off Delay Time | 79 ns |
| Continuous Drain Current (ID) | -40A |
| Threshold Voltage | -4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -100V |
| Dual Supply Voltage | -100V |
| Avalanche Energy Rating (Eas) | 780 mJ |
| Recovery Time | 260 ns |
| Max Junction Temperature (Tj) | 175°C |
| Nominal Vgs | -4 V |
| Height | 19.8mm |
| Length | 10.5156mm |
| Width | 4.69mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF5210PBF Description
IRF5210PBF is a 100V Single P-Channel Power MOSFET in a TO-220 package. The IRF5210PBF MOSFET power MOSFETs are made with proven silicon techniques and can be used in a variety of applications including DC motors, inverters, SMPS, lights, and load switches, and battery-powered applications. For ease of design, the IRF5210PBF is available in a variety of surface mount and through-hole packages with industry-standard footprints.
IRF5210PBF Features
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry-standard through-hole power package
High-current rating
IRF5210PBF Applications
Switching applications
Brushed motor drive applications
BLDC motor drive applications
Battery-powered circuits
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
Half-bridge and full-bridge topologies
Synchronous rectifier applications
