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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.5mOhm @ 15A, 10V ±12V 2410pF @ 10V 35nC @ 4.5V 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer: Infineon Technologies
- NO: 376-IRF3706STRLPBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 44361
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.5mOhm @ 15A, 10V ±12V 2410pF @ 10V 35nC @ 4.5V 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)
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In Stock
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| Parameters | |
|---|---|
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Supplier Device Package | D2PAK |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | HEXFET® |
| Published | 2004 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 88W Tc |
| Element Configuration | Single |
| Power Dissipation | 88W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 77A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 4.5V |
| Rise Time | 87ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.8V 10V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 4.8 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 77A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Input Capacitance | 2.41nF |
| Drain to Source Resistance | 10.5mOhm |
| Rds On Max | 8.5 mΩ |
| RoHS Status | RoHS Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
