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IRF2907ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF2907ZPBF
- Package: TO-220-3
- Datasheet:
- Stock: 2992
- Description: IRF2907ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Current Rating | 75A |
| Number of Elements | 1 |
| Power Dissipation-Max | 300W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 330W |
| Case Connection | DRAIN |
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.5m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7500pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 160A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
| Rise Time | 140ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 100 ns |
| Turn-Off Delay Time | 97 ns |
| Continuous Drain Current (ID) | 75A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 75V |
| Pulsed Drain Current-Max (IDM) | 680A |
| Dual Supply Voltage | 75V |
| Avalanche Energy Rating (Eas) | 690 mJ |
| Nominal Vgs | 4 V |
| Height | 9.017mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 4.5MOhm |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 75V |
| Technology | MOSFET (Metal Oxide) |
IRF2907ZPBF Description
Infineon Technologies' IRF2907ZPBF is a HEXFET? Power MOSFET from the firm. The newest processing techniques are used in this HEXFET? Power MOSFET to provide exceptionally low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a wide range of applications.
IRF2907ZPBF Features
Advanced Process Technology
Ultra-Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
IRF2907ZPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
