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IRF1407PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF1407PBF
- Package: TO-220-3
- Datasheet:
- Stock: 3163
- Description: IRF1407PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-220AB |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2001 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 7.8Ohm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 75V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 130A |
| Number of Elements | 1 |
| Power Dissipation-Max | 330W Tc |
| Element Configuration | Single |
| Power Dissipation | 330W |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 78A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 130A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 250nC @ 10V |
| Drain to Source Voltage (Vdss) | 75V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 140 ns |
| Turn-Off Delay Time | 150 ns |
| Continuous Drain Current (ID) | 130A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 75V |
| Dual Supply Voltage | 75V |
| Input Capacitance | 5.6nF |
| Drain to Source Resistance | 7.8mOhm |
| Rds On Max | 7.8 mΩ |
| Nominal Vgs | 4 V |
| Height | 16.51mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF1407PBF Description
Infineon Technologies manufactures the IRF1407PBF HEXFET? Power MOSFET. The maximum power dissipation and operating temperature of the IRF1407PBF are both 330W. It is packaged in the TO-220-3 format. This HEXFET? Power MOSFET Stripe Planar design employs the most advanced processing techniques to provide incredibly low on-resistance per silicon area. A 175°C junction operating temperature, quick switching speed, and increased repeating avalanche rating are all attributes of this HEXFET power MOSFET. These features combine to make this design a highly efficient and dependable device that can be used in a wide range of applications.
IRF1407PBF Features
Advanced Process Technology
Ultra-Low On-Resistance
Dynamic DV/DT Rating
175°C Operating Temperature
Fast Switching
IRF1407PBF Applications
Power Management
Industrial
DC-DC Conversion
Switch application
