Products
Manufacturer
RFQ
NEWS
ContactIRF1405PBF
IRF1405PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF1405PBF
- Package: TO-220-3
- Datasheet:
- Stock: 5251
- Description: IRF1405PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 110 ns |
| Turn-Off Delay Time | 130 ns |
| Continuous Drain Current (ID) | 169A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 75A |
| Drain to Source Breakdown Voltage | 55V |
| Pulsed Drain Current-Max (IDM) | 680A |
| Dual Supply Voltage | 55V |
| Avalanche Energy Rating (Eas) | 560 mJ |
| Recovery Time | 130 ns |
| Max Junction Temperature (Tj) | 175°C |
| Nominal Vgs | 4 V |
| Height | 19.8mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 5.3mOhm |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 55V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 169A |
| Lead Pitch | 2.54mm |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 330W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 330W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.3m Ω @ 101A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5480pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 169A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
| Rise Time | 190ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
IRF1405PBF Description
Modern processing methods are used in this Stripe Planar design of HEXFET? Power MOSFETs to produce extraordinarily low on-resistance per silicon area. This HEXFET power MOSFET also has increased repeating avalanche rating, a rapid switching speed, and a junction operating temperature of 175??C. These advantages work together to make this design a very effective and dependable tool for usage in a range of applications.
IRF1405PBF Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175??C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
IRF1405PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
