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IRF1404PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF1404PBF
- Package: TO-220-3
- Datasheet:
- Stock: 3463
- Description: IRF1404PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2003 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 4mOhm |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 40V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 162A |
| Lead Pitch | 2.54mm |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 333W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 333W |
| Case Connection | DRAIN |
| Turn On Delay Time | 17 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4m Ω @ 121A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5669pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 202A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 196nC @ 10V |
| Rise Time | 190ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 33 ns |
| Turn-Off Delay Time | 46 ns |
| Continuous Drain Current (ID) | 202A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 75A |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 808A |
| Dual Supply Voltage | 40V |
| Avalanche Energy Rating (Eas) | 620 mJ |
| Recovery Time | 117 ns |
| Max Junction Temperature (Tj) | 175°C |
| Nominal Vgs | 4 V |
| Height | 19.8mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
Fast Switching
Fully Avalanche Rated
Lead-Free
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
International Rectifier's seventh generation HEXFET power MOSFET IRF1404PBF uses advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications. TO-220 packages are generally suitable for all commercial and industrial applications with a power consumption of about 50 watts. TO-220 is widely accepted throughout the industry because of its low thermal resistance and low packaging cost.
device
IRF1404PBF applications
Commercial applications
industrial applications
switching speed and rugged applications
