Products
Manufacturer
RFQ
NEWS
ContactIRF1010EPBF
IRF1010EPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF1010EPBF
- Package: TO-220-3
- Datasheet:
- Stock: 4257
- Description: IRF1010EPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2001 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 12mOhm |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 84A |
| Lead Pitch | 2.54mm |
| Number of Elements | 1 |
| Power Dissipation-Max | 200W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 170W |
| Case Connection | DRAIN |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 12m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3210pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 84A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Rise Time | 78ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 53 ns |
| Turn-Off Delay Time | 48 ns |
| Continuous Drain Current (ID) | 84A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 75A |
| Drain to Source Breakdown Voltage | 60V |
| Dual Supply Voltage | 60V |
| Nominal Vgs | 4 V |
| Height | 16.51mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF1010EPBF Description
International Rectifier's IRF1010EPBF MOSFETs use innovative processing techniques to achieve extraordinarily low on-resistance per silicon area. This benefit, when paired with the high switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.
IRF1010EPBF Features
Technology for Advanced Processes
On-Resistance is really low.
Rating for Dynamic dv/dt
Operating Temperature: 175°C
Quick Switching
Avalanche-Resistant
Lead-Free
IRF1010EPBF Applications
IRF1010EPBF is intended for general use and can be used in a variety of situations.
