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IPZ40N04S5L2R8ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPZ40N04S5L2R8ATMA1
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 5346
- Description: IPZ40N04S5L2R8ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-N3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 71W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 71W |
| Case Connection | DRAIN |
| Turn On Delay Time | 4 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2.8m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 30μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 40A |
| Gate to Source Voltage (Vgs) | 16V |
| Max Dual Supply Voltage | 40V |
| Drain to Source Breakdown Voltage | 40V |
| Max Junction Temperature (Tj) | 175°C |
| Height | 1.15mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | Automotive, AEC-Q101, OptiMOS™ |
IPZ40N04S5L2R8ATMA1 Description
Advanced processing techniques are used in Infineon's IR MOSFETTM technology to provide ultra-low on-resistance per silicon area. When combined with the high switching speed and robust device architecture that IR MOSFETTM devices are known for, the designer has an extremely efficient and dependable device that can be employed in a variety of applications.
IPZ40N04S5L2R8ATMA1 Features
?OptiMOSTM is a power MOSFET designed specifically for automotive applications.
? Enhancement mode - Logic Level - N-channel
? AEC Q101 certification
? MSL1 reflow up to 260°C peak
? Operating temperature of 175°C
? Product that is environmentally friendly (RoHS compliant)
? Avalanche-proofed to the nth degree
IPZ40N04S5L2R8ATMA1 Applications
Switching applications
