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IPW65R045C7FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPW65R045C7FKSA1
- Package: TO-247-3
- Datasheet:
- Stock: 3443
- Description: IPW65R045C7FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mount | Through Hole |
| Packaging | Tube |
| Published | 2008 |
| Series | CoolMOS™ C7 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Number of Pins | 3 |
| Package / Case | TO-247-3 |
| Height | 25.4mm |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C TJ |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e3 |
| Terminal Finish | Tin (Sn) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | DRAIN |
| Power Dissipation | 227W |
| Turn On Delay Time | 20 ns |
| Max Dual Supply Voltage | 650V |
| Power Dissipation-Max | 227W Tc |
| Continuous Drain Current (ID) | 46A |
| Max Junction Temperature (Tj) | 150°C |
| Transistor Application | SWITCHING |
| Drain-source On Resistance-Max | 0.045Ohm |
| Turn-Off Delay Time | 82 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 45m Ω @ 24.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1.25mA |
| Input Capacitance (Ciss) (Max) @ Vds | 4340pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs | 93nC @ 10V |
| Rise Time | 14ns |
| Fall Time (Typ) | 7 ns |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 650V |
| Current - Continuous Drain (Id) @ 25°C | 46A Tc |
| Avalanche Energy Rating (Eas) | 249 mJ |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
IPW65R045C7FKSA1 Description
IPW65R045C7FKSA1 MOSFET is built on well-established silicon processes that provides low switching losses, efficiency improvements over the full load range. IPW65R045C7FKSA1 power MOSFET is available in various through-hole and surface-mount packages with standard footprints for designing. Infineon Technologies IPW65R045C7FKSA1 is utilized in Server, Telecom, HID lamp ballast, LED lighting.
IPW65R045C7FKSA1 Features
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Revolutionary best-in-class R DS(on)/package
Excellent superjunction technology experience
Reduced energy stored in output capacitance
IPW65R045C7FKSA1 Applications
Telecom
Server
Solar
HID lamp ballast
LED lighting
