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MOSFET N-CH 600V 11A TO-247
- Manufacturer: Infineon
- NO: 9152-IPW60R299CP
- Package: TO-247-3
- Datasheet:
- Stock: 6748
- Description: MOSFET N-CH 600V 11A TO-247(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Length | 16.03mm |
| Width | 5.16mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Published | 2011 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Number of Terminations | 3 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 600V |
| Terminal Form | THROUGH-HOLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 11A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 96W |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 96W |
| Turn On Delay Time | 10 ns |
| Transistor Application | SWITCHING |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 600V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 11A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 650V |
| Avalanche Energy Rating (Eas) | 290 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 299mOhm |
| Rds On Max | 299 mΩ |
| Capacitance - Input | 1.1nF |
| Height | 21.1mm |
