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MOSFET (Metal Oxide) N-Channel Tube 1.4 Ω @ 2.3A, 10V ±20V 570pF @ 100V 23nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA
- Manufacturer: Infineon Technologies
- NO: 376-IPU80R1K4CEAKMA1
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 9891
- Description: MOSFET (Metal Oxide) N-Channel Tube 1.4 Ω @ 2.3A, 10V ±20V 570pF @ 100V 23nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA (Kg)
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| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 3.9A |
| Pulsed Drain Current-Max (IDM) | 12A |
| DS Breakdown Voltage-Min | 800V |
| Avalanche Energy Rating (Eas) | 170 mJ |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 6 Weeks |
| Mount | Surface Mount |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 63W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.4 Ω @ 2.3A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 240μA |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A Tc |
