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MOSFET (Metal Oxide) N-Channel Tube 3 Ω @ 400mA, 13V ±20V 84pF @ 100V 4.3nC @ 10V 500V TO-251-3 Short Leads, IPak, TO-251AA
- Manufacturer: Infineon Technologies
- NO: 376-IPU50R3K0CEAKMA1
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 7500
- Description: MOSFET (Metal Oxide) N-Channel Tube 3 Ω @ 400mA, 13V ±20V 84pF @ 100V 4.3nC @ 10V 500V TO-251-3 Short Leads, IPak, TO-251AA (Kg)
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| Parameters | |
|---|---|
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 26W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3 Ω @ 400mA, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 30μA |
| Input Capacitance (Ciss) (Max) @ Vds | 84pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain-source On Resistance-Max | 3Ohm |
| Pulsed Drain Current-Max (IDM) | 4.1A |
| DS Breakdown Voltage-Min | 500V |
| Avalanche Energy Rating (Eas) | 18 mJ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 6 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | CoolMOS™ CE |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
