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MOSFET (Metal Oxide) N-Channel Tube 1.4 Ω @ 900mA, 13V ±20V 178pF @ 100V 8.2nC @ 10V 500V TO-251-3 Short Leads, IPak, TO-251AA
- Manufacturer: Infineon Technologies
- NO: 376-IPU50R1K4CEBKMA1
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 212
- Description: MOSFET (Metal Oxide) N-Channel Tube 1.4 Ω @ 900mA, 13V ±20V 178pF @ 100V 8.2nC @ 10V 500V TO-251-3 Short Leads, IPak, TO-251AA (Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | CoolMOS™ |
| Published | 2013 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Power Dissipation-Max | 25W Tc |
| Element Configuration | Single |
| Power Dissipation | 25W |
| Turn On Delay Time | 6.5 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.4 Ω @ 900mA, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 70μA |
| Input Capacitance (Ciss) (Max) @ Vds | 178pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 10V |
| Rise Time | 6ns |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 30 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 3.1A |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.22mm |
| Length | 6.73mm |
| Width | 2.41mm |
| RoHS Status | RoHS Compliant |
